1 item symbol rating unit drain-source voltage v ds 500 continuous drain current i d 15 pulsed drain current i d(puls] 60 gate-source voltage v gs 35 maximum avalanche energy e av *1 88.7 max. power dissipation p d 50 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sK2642-01MR fuji power mos-fet n-channel silicon power mos-fet equivalent circuit schematic maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) gate(g) source(s) drain(d) item symbol test conditions zero gate voltage drain current i dss v ds =500v v gs =35v i d =7.5a v gs =10v i d =7.5a v ds =25v v cc =300v i d =15a v gs =10v r gs =10 ? min. typ. max. units v v a ma na ? s pf a v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 2.50 62.5 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =1ma v gs =0v i d =1ma v ds =v gs tch=25c v gs =0v tch=125c v ds =0v v ds =25v v gs =0v f=1mhz l=100 h t ch =25c i f =2xid v gs =0v t ch =25c i f =id v gs =0v -di/dt=100a/s t ch =25c v a a v mj w c c *1 l=0.72mh, vcc=50v 500 3.5 4.0 4.5 10 500 0.2 1.0 10 100 0.44 0.55 4.5 9.0 1400 2100 250 380 110 170 30 50 110 170 90 140 55 90 15 1.1 1.65 500 8.0 -55 to +150 to-220f15 3. source 2.54 features high speed switching low on-resistance no secondary breakdown low driving power high voltage v gs = 35v guarantee avalanche-proof applications switching regulators ups dc-dc converters general purpose power amplifier
2 characteristics 2sK2642-01MR fuji power mosfet i d [ a ] 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 5v 5.5v 7v 6.5v 6v 8v 10v vgs=20v vds [v] id [a] typical output characteristics id=f(vds):80 s pulse test,tc=25 o c 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 7v 6.5v 5.5v 6v vgs= 5v rds(on) [ ? ] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test, tc=25 o c 012345678910 10 -2 10 -1 10 0 10 1 typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 o c id [a] v gs [ v ] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 max. typ. drain-source on-state resistance rds(on)=f(tch):id=7.5a,vgs=10v rds(on) [ ? ] tch [ o c] 10 -1 10 0 10 1 10 -1 10 0 10 1 typical forward transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 o c gfs [s] id [a] -50 0 50 100 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 min. typ. max. gate threshold voltage vgs(th)=f(tch):id=1ma,vds=vgs vgs(th) [v] tch [ o c ]
3 fuji power mosfet 2sK2642-01MR 10 -2 10 -1 10 0 10 1 10 2 10p 100p 1n 10n crss coss ciss typical capacitances c=f(vds):vgs=0v,f=1mhz c [f] vds [v] 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 250 300 350 400 vcc=100v 250v 400v 100v 250v vcc=400v vgs [v] vds [v] typical gate charge characteristic vgs=f(qg):id=15a,tc=25 o c qg [nc] 0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 10 0 10 1 tch=25 o c typ. forward characteristic of reverse of diode if=f(vsd):80 s pules test,vgs=0v if [a] vsd [v] 0 50 100 150 0 10 20 30 40 50 60 70 power dissipation pd=f(tc) pd [w] tc [ o c ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s t=0.01 s safe operating area id=f(vds):d=0.01,tc=25 o c dc 100ms 10ms 1ms 100 s 10 s vds [v] id [a] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.02 0.05 0.1 0.01 0 transient thermal impedande zthch=f(t) parameter:d=t/t zthch-c [k/w] t [s]
4 fuji power mosfet 2sK2642-01MR 0 50 100 150 0 20 40 60 80 100 avalanche energy derating eas=f(starting tch):vcc=50v,i av =15a eas [mj] starting tch [ o c ]
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